By Topic

Transport in hydrogenated amorphous silicon p‐i‐n solar cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Crandall, Richard S. ; RCA Laboratories, Princeton, New Jersey 08540

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Measurements of the voltage dependence of the photocurrent in hydrogenated amorphous silicon p‐i‐n solar cells are presented along with a simple physical model of the transport. For the conditions of weakly absorbed light, the photocurrent‐voltage curve can be completely specified by the light intensity and electron and hole drift lengths. Furthermore, the carrier with the longer drift length determines the solar cell current‐voltage curve.

Published in:

Journal of Applied Physics  (Volume:53 ,  Issue: 4 )