Reply to ’’Comment on ’Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures’ and on ’Band‐structure dependent transport and impact ionization in GaAs’ ’’

Using semiclassical Monte Carlo simulations and the band structure as calculated by the empirical pseudopotential method, we show that the electron‐phonon scattering rate in GaAs exceeds 10¹⁴ s^-1. As a consequence, impact ionization of ballistic (lucky) electrons becomes extremely unlikely. The objections of Capasso et al. to our treatment are discussed in detail and shown to be physically of minor importance.