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Selectively grown ohmic contacts to δ-doped diamond films

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2 Author(s)
Shim, K.-H. ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon ; Lim, J.-T.

δ-doped homoepitaxial diamond films were grown by microwave CVD (MWCVD) in order to simultaneously achieve convenient carrier sheet concentration (Ns<1013 cm-2) and low acceptor activation energy. The δ-doped layers are contacted laterally using selectively grown highly doped p+-diamond. Si-based contacts were deposited and a temperature independent specific contact resistance of 7×10-5 Ω cm2 was extracted from TLM-measurements between room temperature and 400°C

Published in:

Electronics Letters  (Volume:32 ,  Issue: 15 )

Date of Publication:

18 Jul 1996

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