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Browse Journals & Magazines > Electronics Letters ...> Volume:32 Issue:15 Help

High fmax carbon-doped base InP/lnGaAs heterojunction bipolar transistors grown by MOCVD

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4 Author(s)
Ito, H. ; NTT LSI Labs., Kanagawa, Japan ; Yamahata, S. ; Shigekawa, N. ; Kurishima, K.

The authors report excellent microwave characteristics of C-doped base InP/InGaAs heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapour deposition (MOCVD). A combination of a low resistance base layer (2.5×1019 cm-3, 700 Å) and a very narrow emitter mesa structure (0.5×4.7 μm 2) enabled us to achieve a record maximum oscillation frequency (fmax) of 170 GHz at Jc=1.7×105 A/cm2 for C-doped base InP/InGaAs HBTs

Published in:
Electronics Letters  (Volume:32 ,  Issue: 15 )

Date of Publication: 18 Jul 1996

Page(s):
1415 - 1416
ISSN :
0013-5194
INSPEC Accession Number:
5343650
Digital Object Identifier :
10.1049/el:19960915
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
18 Jul 1996
Sponsored by :
Institution of Engineering and Technology

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