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Current-dependent silicon oxide growth during scanned probe lithography

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5 Author(s)
Ruskell, T.G. ; Optical Sci. Center, Arizona Univ., Tucson, AZ, USA ; Pyle, J.L. ; Workman, R.K. ; Yao, X.
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Measurement of picoAmp currents during silicon oxide growth by scanning probe lithography is reported. The observed current is attributed to the reduction of H- ions produced by the oxidation process. The local electrical quality of the nanofabricated oxide lines, probed by local Fowler-Nordheim tunnelling, is found to be uniform and highly insulating

Published in:

Electronics Letters  (Volume:32 ,  Issue: 15 )