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High performance millimetre-wave amplifiers with dry gate recess etched InP HEMTs

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4 Author(s)
Duran, H. ; Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich ; Schefer, M. ; Bachtold, W. ; Beck, M.

Several millimetre-wave amplifier integrated circuits have been fabricated using methane-hydrogen reactive ion etching (RIE) for definition of the gate recess. Highly uniform device parameters and good microwave and noise performance have been measured. A single stage amplifier yielded a gain of 11.9 dB at 62 GHz, and a third order input intercept point of 19.5 dBm. This demonstrates the suitability of the RIE process for circuit fabrication

Published in:

Electronics Letters  (Volume:32 ,  Issue: 15 )