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Kondo lattice mixed valence behavior in the Ce(SnxPb1-x)3 system

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5 Author(s)
Teter, J. ; Department of Physics, Temple University, Philadelphia, Pennsylvania 19122 ; Freitag, R. ; , A. ; Crow, J.E.
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Measurements of the electrical resistivity versus x and temperature T, for 1.5≤T≤300 K for the fcc system Ce(SnxPb1-x)3 are reported. CeSn3 has been shown to be a strongly mixed valent system with an average occupation number of the Ce 4f level nf of ∼0.4 at low temperatures. The electrical resistivity for Ce(SnxPb1-x)3 is compared to that obtained for other Ce based mixed valent–trivalent systems and to the predictions of the Newns and Hewson theory. These comparisons suggest that Ce(SnxPb1-x)3 is mixed valent for x≳0.5 and the scaling of the resistivity supports the previous result that CeSn3 is strong mixed valent with nf≂0.4.

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Journal of Applied Physics  (Volume:53 ,  Issue: 11 )