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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:52 Issue:6 Help

The behavior of dislocations in GaAs substrates during the growth of GaxAl1-xAs epitaxial layers

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3 Author(s)
Booyens, H. ; IBM Thomas J. Watson Research Center, Box 218, Yorktown Heights, New York 10598 ; Basson, J.H. ; Small, M.B.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.329263 

Infrared elastobirefringence is used to investigate the dislocation distribution in GaAs substrates on which Ga0.35Al0.65As epitaxial layers have been grown at 950 °C using liquid phase epitaxy. A marked asymmetry is observed in the dislocation distributions as regards the two nonequivalent 〈110〉 directions in the (001) plane. The dislocation distributions consist mainly of 60° dislocations and a small number of pure edge dislocations. Almost all the dislocations are of the α type. The dislocation distributions observed are discussed with reference to the properties of the dislocations involved and the temperature dependences of the lattice parameters of the epitaxial layer and the substrate.

Published in:
Journal of Applied Physics  (Volume:52 ,  Issue: 6 )

Date of Publication: Jun 1981

Page(s):
4112 - 4114
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.329263
Product Type:
Journals & Magazines
Date of Current Version :
06 July 2009
Issue Date :
Jun 1981

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