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RF silicon MOS integrated power amplifier for analog cellular applications

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7 Author(s)
Ngo, D. ; Commun. Products Lab., Motorola Inc., Tempe, AZ, USA ; Dragon, C. ; Costa, J. ; Lamey, D.
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We report the RF performance of the first integrated power amplifier using silicon MOS field effect transistors, shunt and series capacitors, transmission lines, spiral inductors, ground vias and ESD protection devices. The amplifier provided an output power of 1.5 W and 56% efficiency at a supply voltage of 5.8 V (850 MHz) with 25 dB of small signal gain and more than 10 dB input return loss.

Published in:

Microwave Symposium Digest, 1996., IEEE MTT-S International  (Volume:2 )

Date of Conference:

17-21 June 1996