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Integrated coplanar mm-wave amplifier with gain control using a dual-gate InP HEMT

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5 Author(s)
Schefer, M. ; Lab. for EM Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland ; Meier, H.-P. ; Klepser, B.-U. ; Patrick, W.
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A variable gain mm-wave amplifier, based on InP HEMT devices, is demonstrated. The measured gain control range of 14 dB is the largest reported in the mm-wave range for a monolithically integrated variable gain amplifier. The two stage circuit consists of a single gate transistor and a dual-gate transistor. The circuit has a maximum gain of 22 dB at 44 GHz and a bandwidth of 14.6 GHz. The circuit was fabricated in coplanar technology.

Published in:

Microwave Symposium Digest, 1996., IEEE MTT-S International  (Volume:2 )

Date of Conference:

17-21 June 1996