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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox {In}_{0.75}\hbox {Ga}_{0.25}\hbox {As} MOSFET

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8 Author(s)
Wu, Y.Q. ; Birck Nanotech- nology Center, Purdue Univ., West Lafayette, IN ; Wang, W.K. ; Koybasi, O. ; Zakharov, D.N.
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We report the experimental demonstration of deep-submicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100-200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200-130-nm-long gates exhibit drain currents of 232-440 muA/mum and transconductances of 538-705 muS/mum. The 100-nm device has a drain current of 801 muA/mum and a transconductance of 940 muS/mum. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.

Published in:

Electron Device Letters, IEEE  (Volume:30 ,  Issue: 7 )