By Topic

Self-Aligned Planar Double-Gate MOSFETs by Bonding for 22-nm Node, With Metal Gates, High- \kappa Dielectrics, and Metallic Source/Drain

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

16 Author(s)
M. Vinet ; CEA-LETI/Minatec, Grenoble ; T. Poiroux ; C. Licitra ; J. Widiez
more authors

In this letter, we report the fabrication and characterization of self-aligned double-gate MOSFETs with gate length down to 6 nm. Based on molecular bonding, the interest of this original process relies on the fact that, for the first time, technological options such as planar process, independently biasable gates, and metallic source and drain are integrated all together to address critical issues for sub-22-nm node, such as variability, short channel effect control, and access resistance decrease. Good electrical performance of pMOS transistors is demonstrated. Short channel effects are very well controlled down to 30 nm. The independent biasing of the two gates allows tuning of the characteristics, depending on the targeted applications.

Published in:

IEEE Electron Device Letters  (Volume:30 ,  Issue: 7 )