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A CMOS–MEMS RF-Tunable Bandpass Filter Based on Two High- Q 22-MHz Polysilicon Clamped-Clamped Beam Resonators

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8 Author(s)
Joan Lluis Lopez ; Dept. of Electron. Eng., Univ. Autonoma de Barcelona, Barcelona ; Jaume Verd ; Arantxa Uranga ; Joan Giner
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This letter presents the design, fabrication, and demonstration of a CMOS-MEMS filter based on two high-Q submicrometer-scale clamped-clamped beam resonators with resonance frequency around 22 MHz. The MEMS resonators are fabricated with a 0.35-mum CMOS process and monolithically integrated with an on-chip differential amplifier. The CMOS-MEMS resonator shows high-quality factors of 227 in air conditions and 4400 in a vacuum for a bias voltage of 5 V. In air conditions, the CMOS-MEMS parallel filter presents a programmable bandwidth from 100 to 200 kHz with a <1-dB ripple. In a vacuum, the filter presents a stop-band attenuation of 37 dB and a shape factor as low as 2.5 for a CMOS-compatible bias voltage of 5 V, demonstrating competitive performance compared with the state of the art of not fully integrated MEMS filters.

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IEEE Electron Device Letters  (Volume:30 ,  Issue: 7 )