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Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm

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3 Author(s)
Hongping Zhao ; Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA ; Arif, R.A. ; Tansu, N.

Staggered InGaN quantum wells (QWs) are analyzed as improved active region for light-emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band structure is based on a self-consistent 6-band kmiddotp formalism taking into account the valence band mixing, strain effect, and spontaneous and piezoelectric polarizations as well as the carrier screening effect. Both two-layer staggered InxGa1- xN/InyGa1- yN QW and three-layer staggered InyGa1- yN/InxGa1- xN/InyGa1- yN QW structures are investigated as active region to enhance the spontaneous emission radiative recombination rate (R sp) for LEDs emitting at 500 nm and 540 nm. Analysis of the spontaneous emission radiative recombination rate (R sp) shows significant enhancement for both two-layer staggered InGaN QW and three-layer staggered InGaN QW, in comparison to that of the conventional InzGa1- zN QW. The studies of the carrier lifetime indicate a significant reduction of the carrier lifetime for staggered InGaN QWs, which contribute to the enhancement of the radiative efficiency for both two-layer staggered InGaN QW and three-layer staggered InGaN QW LEDs emitting at 500 nm and 540 nm.

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:15 ,  Issue: 4 )

Date of Publication:

July-aug. 2009

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