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A low oxygen content (LOC) CuAl alloy with no barrier metal (Ta) oxidation was obtained using an oxygen absorption process based on metallurgical thermodynamic principles. LOC CuAl dual damascene interconnects (DDIs) were successfully implemented into 45-nm-node LSIs with 140-nm-pitched lines and 70-nm-diameter (phi) vias. An oxygen absorber of very thin Al film, which was deposited on an electrochemically deposited (ECD) Cu film, captured the oxygen atoms in the ECD Cu due to its larger negative change in the standard Gibbs-free energy of oxidation than in the Cu and the barrier (Ta), preventing the Ta barrier from oxidizing during high-temperature annealing. The high-quality Cu/barrier interface in the LOC CuAl DDIs remarkably improved the via reliability against stress-induced voiding and electromigration. No reliability degradation of the 70-nm-phi vias was observed in the 45-nm-node LOC CuAl DDIs, while keeping the scalability from the 65-nm-node generation.