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Defect analysis in polycrystalline silicon solar cells

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4 Author(s)
Sastry, O.S. ; Thin Film‐Solid State Technology Cell, Department of Physics, Indian Institute of Technology, Delhi, New Delhi‐110016, India ; Dutta, V. ; Mukerjee, A.K. ; Chopra, K.L.

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Localized bulk defects like diffusion length variations and structural defects like grain boundaries are analyzed in polycrystalline silicon solar cells using laser scanning and deep level transient spectroscopy techniques. The effect of hydrogen passivation on the role of grain boundaries has been studied.

Published in:

Journal of Applied Physics  (Volume:57 ,  Issue: 12 )