By Topic

GaAs homojunction rib waveguide directional coupler switch

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Carenco, A. ; Centre National D''Etudes des Telecommunications, 196 rue de Paris, 92220 Bagneux, France ; Menigaux, L.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

An electro‐optic directional coupler switch has been fabricated with a GaAs homojunction structure and tested at 1.15 μm. Each single mode guide is made in a n‐LPE layer grown on a n+ substrate, the p+ rib used to confine the light being obtained by Zn diffusion and chemical etching. A calculation of the losses in the planar approximation roughly yields the large values of attenuation measured for TE and TM modes (∼8 cm-1). By reversely biasing the ’’stepped Δβ’’ junctions with less than 17 V, more than 13 dB power isolation has been achieved for both switching states on a 6.3‐mm‐long device. Large improvements of the characteristics are expected from the additional design parameters provided by GaAs‐GaAlAs double heterostructure.

Published in:

Journal of Applied Physics  (Volume:51 ,  Issue: 3 )