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Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET]

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10 Author(s)
Mouret, I. ; Motorola Semicond., Toulouse, France ; Calvet, M.-C. ; Calvel, P. ; Tastet, P.
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The temperature and angular dependence of Single-Event Gate Rupture (SEGR) experiments, conducted on power DMOS transistors, show that a normal incident angle favors SEGR and elevated temperature is insignificant. Both the oxide and substrate response play a major role in determining the SEGR sensitivity

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Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 3 )