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Modification of single event upset cross section of an SRAM at high frequencies

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6 Author(s)
S. Buchner ; Naval Res. Lab., Washington, DC, USA ; A. B. Campbell ; D. McMorrow ; J. Melinger
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Single event upset cross sections exhibit a clock frequency dependence, the origins of which have been investigated in a CMOS SRAM, both with a pulsed laser synchronized to the operation of the circuit and with a circuit simulator modeling program

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IEEE Transactions on Nuclear Science  (Volume:43 ,  Issue: 3 )