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Single event damage effects in cryogenic CMOS microelectronics

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1 Author(s)
J. C. Pickel ; Maxwell Labs., Mission Viejo, CA, USA

Cryogenic microelectronics, as used in focal plane arrays in space-based optical sensors, are potentially vulnerable to single event damage effects from energetic heavy ions and protons. Results are presented for numerical simulation and analytical assessment of potential effects in generic FPAs. Present-generation FPAs are not likely to be affected by single event damage, but the potential will increase as minimum transistor size is made smaller

Published in:

IEEE Transactions on Nuclear Science  (Volume:43 ,  Issue: 3 )