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A MOSFET model including total dose effects

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2 Author(s)
Villard, P. ; Ecole Superieure d''Electr., Gif-sur-Yvette, France ; Kielbasa, R.

In most of the MOSFET models, it is assumed that the rad-induced interface state energy distribution is uniform. This assumption is rarely valid. So, in order to study the influence of the distribution shape, we propose a physical one-dimensional MOSFET model based on Pao and Sah's (1966) analysis. After a description of the model and simulation environment, we give theoretical results about the interface trap effects on weak inversion V-I characteristics, then we compare simulation results to experimental data. Finally, we propose a new method for estimating the total interface charge, including oxide trapped holes and interface states, as a function of the surface potential

Published in:

Nuclear Science, IEEE Transactions on  (Volume:43 ,  Issue: 3 )

Date of Publication:

Jun 1996

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