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A new semiconductor junction diode space charge layer capacitance model

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1 Author(s)
Van Halen, P. ; Dept. of Electr. Eng., Portland State Univ., OR

A new expression for the semiconductor junction diode space-charge capacitance has been derived. This new equation preserves the traditional meaning of zero-voltage capacitance and built-in potential and, without introducing any new fitting parameters of its own, eliminates the fitting parameter FC currently used in SPICE. In a single expression, the new model provides an accurate model for the junction capacitance for all reverse bias voltages and for forward bias up to the built-in voltage. Both the capacitance expression and its derivatives are continuous finite values of the diode capacitance for all junction voltages. A charge expression for this new model is also presented, and it is shown that with this expression charge conservation is preserved in circuit simulators

Published in:

Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988

Date of Conference:

12-13 Sep 1988