By Topic

Effects of transient and permanent optical confinement on the far‐field radiation pattern from electron‐beam‐pumped semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Gouin, F. ; Department of Engineering Physics and Institute for Materials Research, McMaster University, Hamilton, Ontario, Canada, L8S 4M1 ; Shewchun, J. ; Garside, B.K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.326387 

The dynamic behavior of electron‐beam‐pumped semiconductor lasers can change drastically depending on whether transient or permanent waveguiding predominates. Measurements of the far‐field diffraction patterns at lasing threshold from GaAs bulk crystal and GaInAs heteroepitaxial layers of various thicknesses are reported. The refractive‐index step at the interface between the epi‐layer and the substrate due to the changes in material composition results in optical confinement of the laser radiation within the GaInAs layer. A theoretical model for such a laser cavity is introduced to investigate the dependence of the diffraction loss and the transverse distribution of the radiation on the cavity parameters. The effects of the confining surface decrease as it becomes less accessible to the laser radiation. The critical parameters are the thickness of the passive region, the optical losses in that same region, and the refractive‐index difference between active and passive regions. The analysis permits the determination of the specific conditions under which the effects of the back‐reflecting surface become negligible.

Published in:

Journal of Applied Physics  (Volume:50 ,  Issue: 5 )