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Hot-carrier effects in polysilicon emitter bipolar transistors

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2 Author(s)
D. Burnett ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; C. Hu

The degradation of self-aligned, polysilicon emitter transistors is described for a wide range of constant current stress on several device sizes. The experimental results indicate that ΔI B can be expressed as AQn, with n=0.5 for these devices. Except for large values of I R, A varies in a power-lay fashion with I R. The dependence of ΔIB upon the forward current at which the device is operating can be expressed as A=BJγC. It is observed that n is characteristic of all devices and stress currents, B is constant for a given device size, and γ varies with device size and reverse current

Published in:

Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988

Date of Conference:

12-13 Sep 1988