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A new version of a diode simulation code has been written which allows for nonuniform zoning in both the r and z directions. This new flexibility enables more accurate treatment of crucial areas in the diode such as near emission surfaces and in target regions. The new code also has the ability to treat slanted surfaces such as that found in a tapered cathode diode. An interesting result of the new code is that a ’’parapotential’’ cathode pinches better than the corresponding flat cathode at the same total current.