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Single‐crystal CdTe with low absorption at 10.6 μm for use as ir laser windows

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2 Author(s)
Selim, F.A. ; Department of Materials Science, University of Southern California, Los Angeles, California 90007 ; Kroger, F.A.

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Optimum conditions for the preparation of CdTe with minimum absorption at 10.6 μm are determined, paying attention both to type and concentration of dopants and the conditions of annealing. Doping with indium and annealing at 700 °C followed by quenching led to material with the smallest absorption coefficient at 10.6 μm of 8×10-4 cm-1.

Published in:

Journal of Applied Physics  (Volume:49 ,  Issue: 7 )

Date of Publication:

Jul 1978

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