Cart (Loading....) | Create Account
Close category search window

Grain‐boundary electromigration in thin films II. Tracer measurements in pure Au

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Tai, K.L. ; Bell Laboratories, Murray Hill, New Jersey 07974 ; Ohring, M.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The first direct measurement of the grain‐boundary ion drift velocity in thin Au films over the temperature range 120–250 °C is reported. Central regions on the narrow stripe conductors were selectively embedded with 195Au tracer atoms and the extent of the subsequent transport was evaluated by a high‐resolution autoradiography technique employing the scanning electron microscope. In one operating mode, the secondary electron image of the exposed Ag grains in the photographic emulsion was revealed. The second mode of operation involved detection of fluorescent Ag‐Lα x rays, generated upon impingement of the finely focused electron beam on the Ag grains. The resultant spatial dependence of the x‐ray intensity was ultimately converted into tracer activity profiles. It was found (1) that Ion transport in grain boundaries of Au is anode directed (this is the case whether or not a Mo glue layer is present), (2) that the ion drift velocity in grain boundaries can be expressed as V=[(5.7±0.6) ×10-2j/T] exp [-(0.80±0.03 eV)/kT] (cm/sec), with j given in units of A/cm2, (3) that the effective valence of ions migrating in grain boundaries ranged from -89 at 120 °C to -20 at 250 °C (for a diffusion correlation factor of unity), and (4) that a plateau was observed in the low temperature (≪180 °C) profiles. (At higher temperatures, the plateau was less apparent and the integrated intensity was higher). This last result is in semiquantitative agreement with the theory developed by the authors to account for grain‐boundary diffusion and electromigration, in the presence of simultaneous atom leakage into the lattice.

Published in:

Journal of Applied Physics  (Volume:48 ,  Issue: 1 )

Date of Publication:

Jan 1977

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.