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GaAs double heterostructure lasers compatible with monolithic intergration of optical devices have been fabricated by wet chemical etching. Results for a variety of laser orientations are reported. External differential quantum efficiencies as high as 18% have been achieved, as well as threshold current densities as low as 4.2 kA/cm2. An analysis for the evaluation of etched‐mirror properties is presented. Using this analysis, it was found that etched mirrors had reflectivity R?0.22±0.05 and scattering losses S=0.3±0.1.