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Dislocation velocities and electronic doping in silicon

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2 Author(s)
Kulkarni, S.B. ; Department of Metallurgy and Materials Research Laboratory, University of Illinois at Urbana‐Champaign, Urbana, Illinois 61801 ; Williams, Wendell S.

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Measurements of velocities of dislocations in silicon as a function of temperature and type of electronic impurity doping using Lang x‐ray topography are reported. Doping with n‐ and p‐type impurities results in an increase of the dislocation velocity and a decrease of the activation energy for both screw and 60° dislocations. The double kink nucleation and migration model of Gerk that takes kink motion to be limited by Auger electron‐hole recombination‐generation processes yields a satisfactory description of the experimental results.

Published in:

Journal of Applied Physics  (Volume:47 ,  Issue: 10 )