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Low-powered high-gain transresistance BiCMOS pulse amplifier

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1 Author(s)
Wulleman, J. ; Interuniversitary Inst. for High Energy, Free Univ., Brussels

A low-powered, high-gain amplifier for detector read out is discussed. The amplifier is fully balanced, differential and symmetrical in circuit topology and layout, making it radiation tolerant and relatively insensitive to varying magnetic fields in the large detector. The circuit has a differential gain of 110 mV/4fC, an average 10/90% rise time of 19 ns, a noise figure of √(5002+1002 )×Ct1.08 electrons and a power consumption of 750 μW. The circuit was implemented in the radiation hard SOI BiCMOS technology of DMILL

Published in:

Electronics Letters  (Volume:32 ,  Issue: 10 )