By Topic

Low-powered high-gain transresistance BiCMOS pulse amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
J. Wulleman ; Interuniversitary Inst. for High Energy, Free Univ., Brussels

A low-powered, high-gain amplifier for detector read out is discussed. The amplifier is fully balanced, differential and symmetrical in circuit topology and layout, making it radiation tolerant and relatively insensitive to varying magnetic fields in the large detector. The circuit has a differential gain of 110 mV/4fC, an average 10/90% rise time of 19 ns, a noise figure of √(5002+1002 )×Ct1.08 electrons and a power consumption of 750 μW. The circuit was implemented in the radiation hard SOI BiCMOS technology of DMILL

Published in:

Electronics Letters  (Volume:32 ,  Issue: 10 )