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A monolithically integrated HEMT-HBT low noise high linearity variable gain amplifier

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5 Author(s)
Kobayashi, K.W. ; Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; Umemoto, D.K. ; Block, T.R. ; Oki, A.K.
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We report on a 1-6 GHz HEMT-HBT three-stage variable gain amplifier (VGA), which is realized using selective molecular beam epitaxy (MBE). The VGA integrates an HEMT low noise amplifier with an HBT analog current-steer variable gain cell and output driver stage to achieve a combination of low noise figure, wide gain control, and high linearity. The HEMT-HBT VGA MMIC obtains a maximum gain of 21 dB with a gain control range >30 dB, a minimum noise figure of 4.3 dB, and an input IP3 (IIP3) greater than -4 dBm over 25 dB of gain central range. By integrating an HEMT instead of on HBT preamplifier stage, the VGA noise figure is improved by as much as 2 dB compared to an all-HBT single-technology design. The HEMT-HBT MMIC demonstrates the functional utility and RF performance advantage of monolithically integrating both HEMT and HBT devices on a single substrate

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Solid-State Circuits, IEEE Journal of  (Volume:31 ,  Issue: 5 )