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Effects of secondary ir irradiation of which photon energy is slightly higher than the indirect band‐gap energy on photoemissive properties of cesiated Si crystals are given. Measurements were made for p+‐, p‐, and n‐type cesiated Si. In the case of the samples which had absorbed metallic cesium by the ampoule method, it was observed that the ir irradiation had little or no effect on the quantum yield of the photoemission for all types of samples, but did cause a shift of the photoemitted EDC (energy distribution curve) towards higher electron energy and at times narrowing of EDC for p+‐ and p‐type samples. ir irradiation had no effect on the n‐type sample. Maximum shift of the low‐energy cutoff of EDC was observed for the ir of 1.25 eV, and it was about 0.4 eV. By the analysis of the ir effect on the photoemitted EDC, the electron escape length was estimated to be about 65–75 Å for photoelectrons excited by a light of 2.6–3.4 eV.