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Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer

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11 Author(s)
McMorrow, D. ; Naval Res. Lab., Washington, DC, USA ; Weatherford, T.R. ; Knudson, A.R. ; Buchner, S.
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The charge-collection characteristics of GaAs heterojunction-insulated-gate FETs fabricated with a low-temperature grown GaAs (LT GaAs) buffer layer are investigated as a function of device bias conditions for laser and ion irradiation. In accordance with earlier measurements, the LT GaAs FETs of this study exhibit a significant reduction in charge-collection efficiencies when compared to those of conventional FETs. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the LT GaAs devices. It is revealed that charge-enhancement processes do occur in the LT devices under certain bias conditions, although at significantly reduced levels when compared to conventional FETs

Published in:

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Date of Conference:

18-22 Sep 1995

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