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Displacement effects induced by high energy protons in semiconductor electronic devices

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4 Author(s)
Buisson, J. ; CEA, Centre d''Etudes Nucleaires de Saclay, Gif-sur-Yvette, France ; Gaillard, R. ; Jaureguy, J.-C. ; Poirault, G.

Degradation coefficients of semiconductor devices irradiated by high energy protons (10 MeV to 800 MeV) at Saturne and Van de Graaf facilities are measured and compared to the NIEL curve of protons in silicon. PIN dosimetry detector's direct voltage variation is modeled by using a device simulator code and the origin of the direct voltage variation with the fluence is clearly identified

Published in:

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Date of Conference:

18-22 Sep 1995