Cart (Loading....) | Create Account
Close category search window
 

Epitaxial Growth of Ice Crystals on the Muscovite Cleavage Plane and Their Relation to Partial Dislocations

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Caslavsky, J.L. ; Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802 ; Vedam, K.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1660054 

The arrangement of oxygen atoms in hexagonal rings in crystals of ice and muscovite gives two possible alternatives of epitaxial connection between these two structures. Which one of these two alternatives is favored depends entirely on the location of potassium atoms in the cleavage plane of the muscovite structure. Since potassium atoms are displaced from the normal environment by the slip taking place along partial Burgers vectors, epitaxial growth of ice crystals on muscovite can be used for the determination of the slip directions and hence for the study of partial dislocations in muscovite crystals.

Published in:

Journal of Applied Physics  (Volume:42 ,  Issue: 2 )

Date of Publication:

Feb 1971

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.