A large signal quasistatic MESFET model with bias dependent elements is derived from both experimental S parameters and DC measurements. As an application, this model is used in the design of a MESFET power amplifier. The analysis and gain optimization of the amplifier is performed using the describing function technique. Maximum gain is obtained by the determination of the optimum bias device conditions. The experimental results show excellent agreement with the CAD simulation
Published in:
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
(Volume:1
)
Date of Conference: 24-27 Jul 1995