By Topic

Investigation of Thermal Stresses in Silicon by Source Image Distortion

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Carron, Gene J. ; Research Division, McDonnell Douglas Corporation, St. Louis, Missouri 63166 ; Walford, L.K. ; Schoeffel, James A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1657996 

The source image distortion (SID) technique has been used to measure the stresses produced by electron beam melting of small regions of single‐crystal silicon wafers. Stress values thus calculated (∼108 Nm-2) agree with other worker's results for stress levels close to the fracture point for single‐crystal silicon. For wafers which had fractured, no source image distortion was visible indicating the absence of stress in those wafers.

Published in:

Journal of Applied Physics  (Volume:40 ,  Issue: 6 )