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Fabrication of SOI structures by uniform zone melting recrystallization for high voltage ICs

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5 Author(s)
Dilhac, J.-M. ; Lab. d''Autom. et d''Anal. des Syst., CNRS, Toulouse, France ; Zerrouk, D. ; Ganibal, C. ; Rossel, P.
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We present new experimental results about a method for creating thick silicon films on localized buried oxide layers, by superficial melting and solidification using a bank of tungsten halogen lamps. The purpose of this technique is to obtain cost-effective “partially SOI” substrates for high voltage smart power applications. Chemical defect revelation has been carried out in the SOI and seeded regions. N-channel MOSFETs have also been fabricated. It appears that crystallographic and electrical quality is sufficient for device processing

Published in:

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Date of Conference:

20-23 May 1996