Cart (Loading....) | Create Account
Close category search window

Effect of 50 MeV Electrons of the Ultimate Fermi Level in Germanium

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Bohlke, W.H. ; Division of Nuclear Engineering and Science, Rensselaer Polytechnic Institute, Troy, New York 12181 ; Kalma, A.H. ; Corelli, J.C.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

p‐type Ge doped with Ga and In to resistivities ranging from 0.001 to 30 Ω·cm and n‐type Ge doped with Sb and As to resistivities ranging from 0.1 to 30 Ω·cm were irradiated with 50 MeV electrons to various doses up to a maximum total integrated flux of 1.0×1019 electrons/cm2. Electrical measurements were performed to determine the effect of irradiation on the temperature dependence (78° to 320°K) of the conductivity, carrier concentration, and Fermi level. After irradiation to relatively high doses (≳1018 electrons/cm2), both types of Ge reach a saturation in the hole concentration which is accompanied by an ultimate value for the Fermi level at Ev+0.220±0.010 eV for all samples studied. Comparison of this result with studies made using fast neutrons shows that the position of the ultimate Fermi level strongly depends on the damaging or ``disordering'' capabilities of the incident radiation. We find that the ultimate Fermi level is positioned closer to the valence band as a result of irradiation by particles capable of imparting a larger maximum recoil energy to the Ge atom. Finally, a comparison is made with the work of others on the ultimate position of the Fermi level for Ge irradiated by 60Co gamma rays and 4.5 MeV electrons which are not sufficiently energetic to produce disordered regions comparable to what is observed in fast‐neutron and 50 MeV electron irradiation of Ge.

Published in:

Journal of Applied Physics  (Volume:39 ,  Issue: 12 )

Date of Publication:

Nov 1968

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.