By Topic

Fluctuations in Luminescent Junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Brophy, James J. ; IIT Research Institute, Chicago, Illinois

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Optical‐emission fluctuations from three types of GaAs and Ga(AsP) p‐n junction luminescent diodes have been examined. Characteristic time constants of 12×10-3 and 0.45×10-3 sec are observed in both the optical noise spectra and forward‐current noise spectra of a GaAs diode in which carrier recombinations occur in the junction space‐charge region. More heavily doped junctions (∼1019 cm-3), in which tunnel currents predominate, exhibit 1/f noise. In either case, correlation exists between optical‐emission noise and forward‐current noise, suggesting that carrier transitions responsible for both effects are the same. Only simple photon noise is observed from a Ga(AsP) diode in which junction diffusion currents are significant, although the forward noise spectrum is also 1/f noise.

Published in:

Journal of Applied Physics  (Volume:38 ,  Issue: 6 )