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A correlation between photoconductive and photo‐Hall data on GaP has revealed direct evidence of hole trapping. From these same data, the position of the sensitizing centers was determined to be 0.66 eV above the valence band. Also, electron to hole mobility ratios between 1.1 and 1.3 and lifetimes of photogenerated carriers in the high‐light region of ∼6×10-6 sec were calculated.