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Electrical Properties of Cr‐SiO Cermet Films

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1 Author(s)
Lood, D.E. ; TRW Systems Group, Redondo Beach, California

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The Hall coefficient, temperature coefficient of resistance, and conductivity of Cr‐SiO cermet films were measured as a function of film composition. The behavior of the Hall coefficient indicates this material should be treated as a two‐carrier system. A model is proposed which may account for this behavior and for the dependence of the temperature coefficient of resistance on small concentrations of SiO.

Published in:

Journal of Applied Physics  (Volume:38 ,  Issue: 13 )