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Simulation of Mobility Variation and Drift Velocity Enhancement Due to Uniaxial Stress Combined with Biaxial Strain in Si PMOS

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3 Author(s)
A. T. Pham ; BST, Tech. Univ. Braunschweig, Braunschweig ; C. Jungemann ; B. Meinerzhagen

In this work, simulations of mobility variation due to the combination of uniaxial stress and biaxial strain are presented. This study provides a better understanding of the mobility variation and predicts the mobility enhancement for higher stress levels. Transport in the non-equilibrium regime is also investigated. High-field channel drift velocity characteristics are evaluated and compared for different combinations of uniaxial stress and biaxial strain. A better overview of the transport enhancement due to stress/strain at different transport situations including near and non-equilibrium is provided.

Published in:

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Date of Conference:

27-29 May 2009