Cart (Loading....) | Create Account
Close category search window
 

Calculation of Hole Mobility in Ge and III-V p-Channels

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Zhang, Y. ; Univ. of Massachusetts, Amherst, MA ; Fischetti, M.V.

We present theoretical results regarding the hole mobility in Ge, GaAs, InGaAs, InSb and GaSb p-channels with SiO2 insulator. The valence subband structure is calculated self-consistently within the framework of a six-band k . p and finite-difference methods. Various scattering processes, non-polar (NP) phonon scattering (acoustic and optical), longitudinal-optical (LO) phonon scattering (Frohlich scattering, III-Vs only), alloy scattering (AL) (InGaAs only) and surface roughness (SR) scattering are included in the calculation. Dielectric screening effects on SR and LO scattering are also taken into account. The results show that Ge and III-V materials have great potential in enhancing hole mobility above the 'universal' Si value. The application of strain, especially uniaxial stress for Ge p-channels and biaxially compressive stress for III-V p-channels, is found to have a significant beneficial effect. Among strained p-channels, InSb yields the largest mobility enhancement. Our theoretical results will finally be compared with available experimental data.

Published in:

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Date of Conference:

27-29 May 2009

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.