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A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs

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5 Author(s)
Lang Zeng ; Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing ; Xiao Yan Liu ; Gang Du ; Jin Feng Kang
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In this paper, we demonstrate a Monte Carlo simulator for ambipolar Schottky barrier MOSFETs which includes tunneling and thermal emission of electrons and holes and the appropriate treatment of carrier transport at nano-scale. The ambipolar characteristic of SB MOSFETs is reproduced by this simulator. The four operation modes in both n and p SB MOSFETs are revealed. Based on these simulations, it is summarized that the tunneling at source side dominates the carrier transport.

Published in:

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Date of Conference:

27-29 May 2009