Skip to Main Content
We have compared different Al2O3-based Variot tunnel dielectrics allowing to program the memory cells with strongly reduced voltages. Despite charge trapping during cycling, the walkout can fully be compensated while maintaining a lower programming and erase voltage than with a SiO2 tunnel dielectric. Furthermore, we have shown that, particularly for Al2O3 with 700C PDA, the data retention after 10k W/E cycles is as good or even better than for devices with conventional SiO2 tunnel dielectric. These optimized stacks show great potential for further flash scaling for embedded as well as stand-alone applications.
Memory Workshop, 2009. IMW '09. IEEE International
Date of Conference: 10-14 May 2009