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Bottom Nitridation Engineering of Multi-Nitridation ONO Interpoly Dielectric for Highly Reliable and High Performance NAND Flash Memory

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11 Author(s)
Liu, C.H. ; Powerchip Semicond. Corp., Hsinchu ; Lin, Y.M. ; Yin, D.Y. ; Tseng, G.H.
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The various methods of multi-nitridation ONO to improve NAND flash memory have been demonstrated in this paper. Excellent cell performance and reliability are obtained compared to convention ONO: (1) 1.9 V program voltage reduction owing to 23 A EOT (equivalant oxide thickness) reduction (2) More than 20% tighter cell Vt distribution width and 30% narrower Vth shift after 10 K cycling can be achieved by supressing ONO bird's beak encroachment of gate re-oxidation by floating gate (FG)/top oxide nitridation. MN-ONO is a promising technology for high density NAND flash beyond 40 nm generation.

Published in:

Memory Workshop, 2009. IMW '09. IEEE International

Date of Conference:

10-14 May 2009

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