Referenced Items are not available for this document.
The developed bonding process utilizes AuSn solder and provides liquid-proof sealing and multiple reliable electrical connections between the bonded wafers. The bond can withstand 300degC and features a thin bond line (2-3 mum), high bond strength, excellent bond gap control, and low stress due to small amount of bonding material. A Nb/Au seed layer was shown to be an optimal adhesion and barrier film.
Published in:
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Date of Conference: 1-3 June 2009
- Page(s):
- 128 - 130
- E-ISBN :
- 978-1-4244-4493-9
- Print ISBN:
- 978-1-4244-4492-2
- INSPEC Accession Number:
- 10719259
- Conference Location :
- Sapporo, Hokkaido
- Digital Object Identifier :
- 10.1109/IITC.2009.5090361
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
