By Topic

Thin-layer Au-Sn solder bonding process for wafer-level packaging, electrical interconnections and MEMS applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Belov, N. ; Nanochip, Inc., Fremont, CA ; Chou, T.-K. ; Heck, J. ; Kornelsen, K.
more authors

The developed bonding process utilizes AuSn solder and provides liquid-proof sealing and multiple reliable electrical connections between the bonded wafers. The bond can withstand 300degC and features a thin bond line (2-3 mum), high bond strength, excellent bond gap control, and low stress due to small amount of bonding material. A Nb/Au seed layer was shown to be an optimal adhesion and barrier film.

Published in:

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Date of Conference:

1-3 June 2009