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Thin-layer Au-Sn solder bonding process for wafer-level packaging, electrical interconnections and MEMS applications

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8 Author(s)
Belov, N. ; Nanochip, Inc., Fremont, CA ; Chou, T.-K. ; Heck, J. ; Kornelsen, K.
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The developed bonding process utilizes AuSn solder and provides liquid-proof sealing and multiple reliable electrical connections between the bonded wafers. The bond can withstand 300degC and features a thin bond line (2-3 mum), high bond strength, excellent bond gap control, and low stress due to small amount of bonding material. A Nb/Au seed layer was shown to be an optimal adhesion and barrier film.

Published in:

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Date of Conference:

1-3 June 2009

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