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In this paper, on-resistance (R on) degradation induced by hot-carrier injection in n-type lateral diffused metal-oxide-semiconductor transistors with shallow trench isolation (STI) in the drift region is investigated. R on unexpectedly decreases under medium- and high-gate voltage (V gs) stress conditions. According to experimental data and technology computer-aided-design simulation results, the mechanisms responsible for anomalous R on shift are proposed. When the device is stressed under medium V gs, hot-hole injection and trapping occur at the STI edge closest to the channel, resulting in R on reduction. Interface trap generation (??N it) occurs at the STI edge closest to the channel and nearby drift region, leading to R on increase. For the device stressed under high V gs, R on reduction is also attributed to hole trapping at the STI corner closest to the channel. ??N it created by hot-electron injection at the STI edge closest to the drain dominates device characteristics and leads to R on increase eventually. Based on the proposed R on degradation mechanisms, an R on degradation model is discussed and verified with experimental data.